MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density...

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Bibliographic Details
Main Authors: Lemettinen, Jori, Okumura, Hironori, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: Elsevier BV 2019
Online Access:https://hdl.handle.net/1721.1/121769

Internet

https://hdl.handle.net/1721.1/121769

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