Leakage and breakdown mechanisms of GaN vertical power FinFETs

Leakage and breakdown mechanisms of GaN vertical power FinFETs

This work studies the leakage and breakdown mechanisms of 1.2 kV GaN vertical power FinFETs with edge termination. Two competing leakage and breakdown mechanisms have been identified. The first mechanism is dominated by the electric field, with the leakage current dominated by the electric field in...

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Bibliographic Details
Main Authors: Xiao, Ming, Gao, Xiang, Palacios, Tomas, Zhang, Yuhao
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: AIP Publishing 2019
Subjects:
Physics and Astronomy (miscellaneous)
Online Access:https://hdl.handle.net/1721.1/121934

Internet

https://hdl.handle.net/1721.1/121934

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