Leakage and breakdown mechanisms of GaN vertical power FinFETs
This work studies the leakage and breakdown mechanisms of 1.2 kV GaN vertical power FinFETs with edge termination. Two competing leakage and breakdown mechanisms have been identified. The first mechanism is dominated by the electric field, with the leakage current dominated by the electric field in...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/1721.1/121934 |