Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Show other versions (1)

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...

Full description

Bibliographic Details
Main Authors: Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, Carl Vernette
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Elsevier BV 2019
Online Access:https://hdl.handle.net/1721.1/122777

Internet

https://hdl.handle.net/1721.1/122777

Similar Items