Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Show other versions (1)

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...

Full description

Bibliographic Details
Main Authors:	Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, Carl Vernette
Other Authors:	Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format:	Article
Language:	English
Published:	Elsevier BV 2019
Online Access:	https://hdl.handle.net/1721.1/122777

Similar Items

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
by: Gao, Yu, et al.
Published: (2019)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
by: Li, Yang, et al.
Published: (2017)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
by: Sasangka, W. A., et al.
Published: (2017)

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
by: Makaram, Prashanth, et al.
Published: (2012)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
by: Marino, Fabio Alessio, et al.
Published: (2011)

Self-aligned AlGaN/GaN transistors for sub-mm wave applications
by: Saadat, Omair I
Published: (2010)

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
by: Lu, Bin, et al.
Published: (2012)

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
by: Tan, H. T., et al.
Published: (2024)

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
by: Li, Libing, et al.
Published: (2014)

On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon
by: Syaranamual, Govindo Joannesha
Published: (2018)

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
by: Jayanta Joglekar, Sameer
Published: (2017)

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
by: Lu, Bin, et al.
Published: (2012)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

AlGaN/GaN-based power semiconductor switches
by: Lu, Bin, Ph. D. Massachusetts Institute of Technology
Published: (2013)

AlGaN/GaN HEMT With 300-GHz fmax
by: Chung, Jinwook, et al.
Published: (2013)

Wet-based digital etching on GaN and AlGaN
by: Shih, Pao-Chuan, et al.
Published: (2022)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
by: Liu, Siyu, et al.
Published: (2024)

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
by: Gao, Feng, Ph. D. Massachusetts Institute of Technology
Published: (2014)

Material characterization of AlGaN/GaN based HEMT structures
by: Nur Hidayat Bin Hatwi
Published: (2014)

Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators
by: Weinstein, Dana, et al.
Published: (2014)

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
by: Lu, Bin, et al.
Published: (2012)

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
by: Lee, Wei Yi.
Published: (2009)

High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
by: Yuan, Mengyang, et al.
Published: (2023)

Nanostructured GaN transistors
by: Chowdhury, Nadim, et al.
Published: (2019)

Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond
by: Kumud Ranjan
Published: (2020)

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
by: Chung, Jinwook W. (Jinwook Will)
Published: (2009)

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
by: Palacios, Tomas, et al.
Published: (2012)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

AlGaN/GaN HEMT based gas sensor characterisation and measurement
by: Ng, Ting Siang
Published: (2018)

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
by: Yuan, Li, et al.
Published: (2013)

Processing technology for high quality AlGaN/GaN MOSHEMT interfaces
by: Saadat, Omair I
Published: (2015)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors
by: Lin, Chung-Han, et al.
Published: (2010)

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
by: Qian, Haisheng, et al.
Published: (2020)

Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI
by: Gao, Yu
Published: (2021)

Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si
by: Chowdhury, Nadim, et al.
Published: (2022)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
by: Whiteside, Matthew David
Published: (2021)