Magnetoresistive Random Access Memory (MRAM) technology : current advancement and future development

Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2010

Bibliographic Details
Main Author:	Lnu, Shimon.
Other Authors:	Caroline A. Ross.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2019
Subjects:	Materials Science and Engineering.
Online Access:	https://hdl.handle.net/1721.1/122861

Internet

https://hdl.handle.net/1721.1/122861