Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts
Recently, sub-10-nm-diameter InGaAs vertical nanowire (VNW) MOSFETs have been demonstrated. The key to this achievement was the use of Ni for the top ohmic contact. In this paper, we present a detailed study of the impact of Ni and Mo contacts on the electrical characteristics of highly scaled InGaA...
| Main Authors: | , , , , , |
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| 格式: | 文件 |
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| 在线阅读: | https://hdl.handle.net/1721.1/124339 |