Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

Recently, sub-10-nm-diameter InGaAs vertical nanowire (VNW) MOSFETs have been demonstrated. The key to this achievement was the use of Ni for the top ohmic contact. In this paper, we present a detailed study of the impact of Ni and Mo contacts on the electrical characteristics of highly scaled InGaA...

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Main Authors: Zhao, Xin, Heidelberger, Christopher, Fitzgerald, Eugene A, Lu, Wenjie, Vardi, Alon, del Alamo, Jesus A
其他作者: Lincoln Laboratory
格式: 文件
出版: Institute of Electrical and Electronics Engineers (IEEE) 2020
在线阅读:https://hdl.handle.net/1721.1/124339