Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Taispeáin leaganacha eile (1)

The integration of III-V semiconductors (e.g., GaAs and GaN) and silicon-on-insulator (SOI)-CMOS on a 200mm Si substrate is demonstrated. The SOI-CMOS donor wafer is temporarily bonded on a Si handle wafer and thinned down. A second GaAs/Ge/Si substrate is then bonded to the SOI-CMOS-containing hand...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Lee, Kwang Hong, Bao, Shuyu, Zhang, Li, Kohen, David, Fitzgerald, Eugene A, Tan, Chuan Seng
Rannpháirtithe:	Singapore-MIT Alliance in Research and Technology (SMART)
Formáid:	Alt
Teanga:	English
Foilsithe / Cruthaithe:	Japan Society of Applied Physics 2020
Rochtain ar líne:	https://hdl.handle.net/1721.1/124355

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