Impact of proton-induced transmutation doping in semiconductors for space applications

Impact of proton-induced transmutation doping in semiconductors for space applications

Critical satellite-based electronics can fail due to irradiation with Van Allen belt trapped protons. While nuclear-reaction-induced transmutation damage is typically ignored, a recent study raised the question of its potential importance in explaining anomalous trends in III-V nBn device operation....

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Bibliographic Details
Main Authors: Logan, Julie V., Short, Michael P, Webster, Preston T., Morath, Christian P., Steenbergen, Elizabeth H.
Other Authors: Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Format: Article
Language:English
Published: Royal Society of Chemistry (RSC) 2020
Online Access:https://hdl.handle.net/1721.1/124428

Internet

https://hdl.handle.net/1721.1/124428

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