Impact of proton-induced transmutation doping in semiconductors for space applications
Critical satellite-based electronics can fail due to irradiation with Van Allen belt trapped protons. While nuclear-reaction-induced transmutation damage is typically ignored, a recent study raised the question of its potential importance in explaining anomalous trends in III-V nBn device operation....
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Royal Society of Chemistry (RSC)
2020
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| Online Access: | https://hdl.handle.net/1721.1/124428 |