In-Plane Ferroelectric Tunnel Junction
Ferroelectric materals are an important platform for the realization of nonvolatile memories. So far, existing ferroelectric memory devices have utilized out-of-plane polarization in ferroelectric thin films. In this paper, we propose a type of random-access memory (RAM) based on ferroelectric thin...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2020
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| Online Access: | https://hdl.handle.net/1721.1/125318 |