Analysis of optical integration between Si3N4 waveguide and a Ge-based optical modulator using a lateral amorphous GeSi taper at the telecommunication wavelength of 1.55 µm
We report on the theoretical investigation of using an amorphous Ge[subscript 0.83]Si[subscript 0.17] lateral taper to enable a low-loss small-footprint optical coupling between a Si[subscript 3]N[subscript 4] waveguide and a low-voltage Ge-based Franz-Keldysh optical modulator on a bulk Si substrat...
| Principais autores: | , , |
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| Outros Autores: | |
| Formato: | Artigo |
| Publicado em: |
Multidisciplinary Digital Publishing Institute
2020
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| Acesso em linha: | https://hdl.handle.net/1721.1/125389 |