Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel

Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel

Ferroelectric field-effect transistors (FeFETs) have been considered as promising electrically switchable nonvolatile data storage elements due to their fast switching speed, programmable conductance, and high dynamic range for neuromorphic applications. Meanwhile, FeFETs can be aggressively shrunk...

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Bibliographic Details
Main Authors: Shen, Pin-Chun, Lin, Chungwei, Wang, Haozhe, Teo, Koon Hoo, Kong, Jin Au
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: AIP Publishing 2020
Online Access:https://hdl.handle.net/1721.1/125845

Internet

https://hdl.handle.net/1721.1/125845

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