Nanofabricated Low-Voltage Gated Si Field-Ionization Arrays
We demonstrate high-density (1-μm pitch) silicon field-ionization arrays (FIAs) with self-aligned gate apertures (350 nm in diameter) and integrated nanowire current regulators. Our FIAs achieved high field factors (>0.1 nm⁻¹) and significantly lower ionization voltages (<100 V) than the devic...
| প্রধান লেখক: | , , , |
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| অন্যান্য লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| প্রকাশিত: |
Institute of Electrical and Electronics Engineers (IEEE)
2020
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| অনলাইন ব্যবহার করুন: | https://hdl.handle.net/1721.1/126046 |