Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs
We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs under moderate positive and negative gate bias stress. We investigate the evolution of threshold voltage (V T ), maximum transconductance (g m,max ), and subthreshold swing (S). Our results show a universal continu...
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| Formato: | Artigo |
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Acesso em linha: | https://hdl.handle.net/1721.1/126167 |