Sub-Thermal Subthreshold Characteristics in Top–Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs
This letter demonstrates top-down InGaAs/InAs heterojunction vertical nanowire tunnel FETs with sub-thermal subthreshold characteristics over two orders of magnitude of current. A minimal subthreshold swing of 53 mV/decade at V[subscript ds] = 0.3 V has been obtained at room temperature. An I[subscr...
| Main Authors: | , , |
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Online Access: | https://hdl.handle.net/1721.1/126168 |