Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress
Schottky gate degradation of W-band InAlN/AlN/GaN high-electron-mobility transistors (HEMTs) has been studied under prolonged positive gate stress. Two different degradation mechanisms have been identified. In an early stage, a gate leakage current increase takes place without any observable drain c...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Online Access: | https://hdl.handle.net/1721.1/126176 |