Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress
Schottky gate degradation of W-band InAlN/AlN/GaN high-electron-mobility transistors (HEMTs) has been studied under prolonged positive gate stress. Two different degradation mechanisms have been identified. In an early stage, a gate leakage current increase takes place without any observable drain c...
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Online Access: | https://hdl.handle.net/1721.1/126176 |
| _version_ | 1826202908776988672 |
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| author | Wu, Yufei del Alamo, Jesus A |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Wu, Yufei del Alamo, Jesus A |
| author_sort | Wu, Yufei |
| collection | MIT |
| description | Schottky gate degradation of W-band InAlN/AlN/GaN high-electron-mobility transistors (HEMTs) has been studied under prolonged positive gate stress. Two different degradation mechanisms have been identified. In an early stage, a gate leakage current increase takes place without any observable drain current nor source and drain resistance degradation. We propose electric field induced trap generation in the AlN barrier layer as the cause. Under harsher gate stress, a second degradation mechanism kicks in where gate leakage current, as well as drain current and the source and drain resistances degrade significantly. We attribute this to Schottky barrier degradation due to severe local self-heating. |
| first_indexed | 2024-09-23T12:25:56Z |
| format | Article |
| id | mit-1721.1/126176 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T12:25:56Z |
| publishDate | 2020 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1261762022-10-01T09:10:47Z Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress Wu, Yufei del Alamo, Jesus A Massachusetts Institute of Technology. Microsystems Technology Laboratories Schottky gate degradation of W-band InAlN/AlN/GaN high-electron-mobility transistors (HEMTs) has been studied under prolonged positive gate stress. Two different degradation mechanisms have been identified. In an early stage, a gate leakage current increase takes place without any observable drain current nor source and drain resistance degradation. We propose electric field induced trap generation in the AlN barrier layer as the cause. Under harsher gate stress, a second degradation mechanism kicks in where gate leakage current, as well as drain current and the source and drain resistances degrade significantly. We attribute this to Schottky barrier degradation due to severe local self-heating. National Reconnaissance Office (Contract DII NRO000-13C0309) 2020-07-14T15:21:15Z 2020-07-14T15:21:15Z 2017-06 2017-04 Article http://purl.org/eprint/type/ConferencePaper 9781509066414 1938-1891 https://hdl.handle.net/1721.1/126176 Wu, Yufei and Jesus A. del Alamo. "Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress." IEEE International Reliability Physics Symposium Proceedings, April 2017, Monterey, CA, USA, Institute of Electrical and Electronics Engineers, June 2017 © 2017 IEEE http://dx.doi.org/10.1109/irps.2017.7936284 IEEE International Reliability Physics Symposium Proceedings Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/msword application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. del Alamo via Phoebe Ayers |
| spellingShingle | Wu, Yufei del Alamo, Jesus A Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress |
| title | Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress |
| title_full | Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress |
| title_fullStr | Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress |
| title_full_unstemmed | Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress |
| title_short | Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress |
| title_sort | gate current degradation in w band inaln aln gan hemts under gate stress |
| url | https://hdl.handle.net/1721.1/126176 |
| work_keys_str_mv | AT wuyufei gatecurrentdegradationinwbandinalnalnganhemtsundergatestress AT delalamojesusa gatecurrentdegradationinwbandinalnalnganhemtsundergatestress |