A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor
A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low ga...
| Main Authors: | , , , , |
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Online Access: | https://hdl.handle.net/1721.1/126179 |
| _version_ | 1811079563711610880 |
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| author | Yin, Zongyou Tordjman, Moshe Vardi, Alon Kalish, Rafi del Alamo, Jesus A |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Yin, Zongyou Tordjman, Moshe Vardi, Alon Kalish, Rafi del Alamo, Jesus A |
| author_sort | Yin, Zongyou |
| collection | MIT |
| description | A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO 3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication. |
| first_indexed | 2024-09-23T11:17:00Z |
| format | Article |
| id | mit-1721.1/126179 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T11:17:00Z |
| publishDate | 2020 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1261792022-10-01T02:35:24Z A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor Yin, Zongyou Tordjman, Moshe Vardi, Alon Kalish, Rafi del Alamo, Jesus A Massachusetts Institute of Technology. Microsystems Technology Laboratories Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO 3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication. 2020-07-14T16:10:56Z 2020-07-14T16:10:56Z 2018-02 Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 https://hdl.handle.net/1721.1/126179 Yin, Zongyou et al. "A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor." IEEE Electron Device Letters 39, 4 (February 2018): 540 - 543 © 2018 IEEE http://dx.doi.org/10.1109/led.2018.2808463 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. del Alamo via Phoebe Ayers |
| spellingShingle | Yin, Zongyou Tordjman, Moshe Vardi, Alon Kalish, Rafi del Alamo, Jesus A A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor |
| title | A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor |
| title_full | A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor |
| title_fullStr | A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor |
| title_full_unstemmed | A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor |
| title_short | A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor |
| title_sort | diamond h wo3 metal oxide semiconductor field effect transistor |
| url | https://hdl.handle.net/1721.1/126179 |
| work_keys_str_mv | AT yinzongyou adiamondhwo3metaloxidesemiconductorfieldeffecttransistor AT tordjmanmoshe adiamondhwo3metaloxidesemiconductorfieldeffecttransistor AT vardialon adiamondhwo3metaloxidesemiconductorfieldeffecttransistor AT kalishrafi adiamondhwo3metaloxidesemiconductorfieldeffecttransistor AT delalamojesusa adiamondhwo3metaloxidesemiconductorfieldeffecttransistor AT yinzongyou diamondhwo3metaloxidesemiconductorfieldeffecttransistor AT tordjmanmoshe diamondhwo3metaloxidesemiconductorfieldeffecttransistor AT vardialon diamondhwo3metaloxidesemiconductorfieldeffecttransistor AT kalishrafi diamondhwo3metaloxidesemiconductorfieldeffecttransistor AT delalamojesusa diamondhwo3metaloxidesemiconductorfieldeffecttransistor |