Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress
The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high V [subscript DS,stress] and high I[subscript Dstress] electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the...
| Main Authors: | , , |
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Online Access: | https://hdl.handle.net/1721.1/126185 |