Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress
The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high V [subscript DS,stress] and high I[subscript Dstress] electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2020
|
| Online Access: | https://hdl.handle.net/1721.1/126185 |
| _version_ | 1811095032971657216 |
|---|---|
| author | Wu, Yufei Sasangka, Wardhana A. del Alamo, Jesus A |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Wu, Yufei Sasangka, Wardhana A. del Alamo, Jesus A |
| author_sort | Wu, Yufei |
| collection | MIT |
| description | The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high V [subscript DS,stress] and high I[subscript Dstress] electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the creation of an anomalous source-side gate leakage path has been identified. We attribute this to high electric-field induced trap generation in the AlN layer directly under the gate edge on the source side. The resulting increase in gate leakage further exacerbates the degradation of the gate diode. In addition, we postulate that high-power stress leads to significant device self-heating that causes gate sinking and leads to a permanent positive threshold voltage shift and drain current degradation. |
| first_indexed | 2024-09-23T16:09:26Z |
| format | Article |
| id | mit-1721.1/126185 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T16:09:26Z |
| publishDate | 2020 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1261852022-10-02T06:45:21Z Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress Wu, Yufei Sasangka, Wardhana A. del Alamo, Jesus A Massachusetts Institute of Technology. Microsystems Technology Laboratories Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Singapore-MIT Alliance in Research and Technology (SMART) The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high V [subscript DS,stress] and high I[subscript Dstress] electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the creation of an anomalous source-side gate leakage path has been identified. We attribute this to high electric-field induced trap generation in the AlN layer directly under the gate edge on the source side. The resulting increase in gate leakage further exacerbates the degradation of the gate diode. In addition, we postulate that high-power stress leads to significant device self-heating that causes gate sinking and leads to a permanent positive threshold voltage shift and drain current degradation. 2020-07-14T19:37:15Z 2020-07-14T19:37:15Z 2017-10 Article http://purl.org/eprint/type/JournalArticle 0018-9383 1557-9646 https://hdl.handle.net/1721.1/126185 Wu, Yufei et al. "Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress." IEEE Transactions on Electron Devices 64, 11 (November 2017): 4435 - 4441 © 2017 IEEE http://dx.doi.org/10.1109/ted.2017.2754248 IEEE Transactions on Electron Devices Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/vnd.openxmlformats-officedocument.wordprocessingml.document application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. del Alamo via Phoebe Ayers |
| spellingShingle | Wu, Yufei Sasangka, Wardhana A. del Alamo, Jesus A Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress |
| title | Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress |
| title_full | Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress |
| title_fullStr | Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress |
| title_full_unstemmed | Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress |
| title_short | Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress |
| title_sort | anomalous source side degradation of inaln gan hemts under high power electrical stress |
| url | https://hdl.handle.net/1721.1/126185 |
| work_keys_str_mv | AT wuyufei anomaloussourcesidedegradationofinalnganhemtsunderhighpowerelectricalstress AT sasangkawardhanaa anomaloussourcesidedegradationofinalnganhemtsunderhighpowerelectricalstress AT delalamojesusa anomaloussourcesidedegradationofinalnganhemtsunderhighpowerelectricalstress |