Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter
This letter introduces a novel alcohol-based digital etch technique for III-V FinFET and nanowire MOSFET fabrication. The new technique addresses the limitations of the conventional water-based approach in enabling structures with sub-10-nm 3-D features. Using the same oxidation step, the new techni...
| Principais autores: | , , , , |
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| Outros Autores: | |
| Formato: | Artigo |
| Publicado em: |
Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Acesso em linha: | https://hdl.handle.net/1721.1/126190 |