Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation
We demonstrate self-aligned InGaAs FinFETs with fin widths down to 5 nm fabricated through a CMOS compatible front-end process. Precision dry etching of the recess cap results in metal contacts that are about 5 nm away from the intrinsic portion of the fin. The new process has allowed us to fabricat...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2020
|
| Online Access: | https://hdl.handle.net/1721.1/126197 |