10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch
We have fabricated self-aligned InGaSb p-channel FinFETs using a novel antimonide-compatible digital etch. This is the first demonstration of digital etch on InGaSb-based transistors of any kind. It has enabled the first fabricated InGaSb FinFETs featuring fin widths down to 10 nm and gate lengths o...
| Main Authors: | , , , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 出版: |
Institute of Electrical and Electronics Engineers (IEEE)
2020
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| 在线阅读: | https://hdl.handle.net/1721.1/126200 |