Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter seq...
| Автори: | , , , , , , , , , , |
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| Інші автори: | |
| Формат: | Стаття |
| Опубліковано: |
Elsevier BV
2020
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| Онлайн доступ: | https://hdl.handle.net/1721.1/126202 |