Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources
Ionic liquid ion sources have been proposed as a new type of ion source for focused ion beam and broad ion beam applications. In this paper, the ionic liquid EMI-BF 4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was used as an ion source to generate negatively charged ions and irradiate glass (Py...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Vacuum Society
2020
|
| Online Access: | https://hdl.handle.net/1721.1/126554 |
| _version_ | 1826201121296744448 |
|---|---|
| author | Lozano, Paulo C |
| author2 | Massachusetts Institute of Technology. Department of Aeronautics and Astronautics |
| author_facet | Massachusetts Institute of Technology. Department of Aeronautics and Astronautics Lozano, Paulo C |
| author_sort | Lozano, Paulo C |
| collection | MIT |
| description | Ionic liquid ion sources have been proposed as a new type of ion source for focused ion beam and broad ion beam applications. In this paper, the ionic liquid EMI-BF 4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was used as an ion source to generate negatively charged ions and irradiate glass (Pyrex 7740), silicon, and silicon dioxide targets. The results indicate that negative EMI-BF 4 ion beams can prevent issues related to surface charge accumulation on dielectric substrates, achieving etching selectivities of SiO 2 :Si of at least 1.55. The etching rate increases on glass, silicon, and silicon dioxide at higher ion landing energies. It is shown that the negative EMI-BF 4 beam has a higher yield than traditional metal gallium ion beams, likely due to the chemical reactivity of fluorine radicals. This effect is also noticeable when compared to results using positive EMI-BF 4 beams. |
| first_indexed | 2024-09-23T11:46:52Z |
| format | Article |
| id | mit-1721.1/126554 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:46:52Z |
| publishDate | 2020 |
| publisher | American Vacuum Society |
| record_format | dspace |
| spelling | mit-1721.1/1265542022-09-27T21:51:46Z Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources Lozano, Paulo C Massachusetts Institute of Technology. Department of Aeronautics and Astronautics Ionic liquid ion sources have been proposed as a new type of ion source for focused ion beam and broad ion beam applications. In this paper, the ionic liquid EMI-BF 4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was used as an ion source to generate negatively charged ions and irradiate glass (Pyrex 7740), silicon, and silicon dioxide targets. The results indicate that negative EMI-BF 4 ion beams can prevent issues related to surface charge accumulation on dielectric substrates, achieving etching selectivities of SiO 2 :Si of at least 1.55. The etching rate increases on glass, silicon, and silicon dioxide at higher ion landing energies. It is shown that the negative EMI-BF 4 beam has a higher yield than traditional metal gallium ion beams, likely due to the chemical reactivity of fluorine radicals. This effect is also noticeable when compared to results using positive EMI-BF 4 beams. 2020-08-13T14:11:29Z 2020-08-13T14:11:29Z 2018-09 2018-04 2019-10-29T17:36:08Z Article http://purl.org/eprint/type/JournalArticle 1071-1023 https://hdl.handle.net/1721.1/126554 Xu, Tiantong, Zhi Tao and Paulo C. Lozano. “Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources.” Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, vol. 36, no. 5, 2018, article 052601 © 2018 The Author(s) en 10.1116/1.5034131 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf American Vacuum Society American Vacuum Society |
| spellingShingle | Lozano, Paulo C Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources |
| title | Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources |
| title_full | Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources |
| title_fullStr | Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources |
| title_full_unstemmed | Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources |
| title_short | Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources |
| title_sort | etching of glass silicon and silicon dioxide using negative ionic liquid ion sources |
| url | https://hdl.handle.net/1721.1/126554 |
| work_keys_str_mv | AT lozanopauloc etchingofglasssiliconandsilicondioxideusingnegativeionicliquidionsources |