Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/12744 |
| _version_ | 1811089461494153216 |
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| author | Jang, Syun-Ming |
| author2 | Rafael Reif. |
| author_facet | Rafael Reif. Jang, Syun-Ming |
| author_sort | Jang, Syun-Ming |
| collection | MIT |
| description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993. |
| first_indexed | 2024-09-23T14:19:33Z |
| format | Thesis |
| id | mit-1721.1/12744 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T14:19:33Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/127442019-04-12T12:17:11Z Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers Jang, Syun-Ming Rafael Reif. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering Materials Science and Engineering Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993. Includes bibliographical references (leaves 186-196). by Syun-Ming Jang. Ph.D. 2005-08-15T22:35:23Z 2005-08-15T22:35:23Z 1993 1993 Thesis http://hdl.handle.net/1721.1/12744 28899012 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 198 leaves 14902905 bytes 14902665 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Materials Science and Engineering Jang, Syun-Ming Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers |
| title | Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers |
| title_full | Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers |
| title_fullStr | Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers |
| title_full_unstemmed | Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers |
| title_short | Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers |
| title_sort | growth characterization and thermal stability of undoped and in situ doped silicon germanium heteroepitaxial layers |
| topic | Materials Science and Engineering |
| url | http://hdl.handle.net/1721.1/12744 |
| work_keys_str_mv | AT jangsyunming growthcharacterizationandthermalstabilityofundopedandinsitudopedsilicongermaniumheteroepitaxiallayers |