Carrier localization in perovskite nickelates from oxygen vacancies

Carrier localization in perovskite nickelates from oxygen vacancies

Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, lead...

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Bibliographic Details
Main Authors: Kotiuga, Michele, Zhang, Zhen, Li, Jiarui, Rodolakis, Fanny, Zhou, Hua, Sutarto, Ronny, He, Feizhou, Wang, Qi, Sun, Yifei, Wang, Ying, Aghamiri, Neda Alsadat, Hancock, Steven Bennett, Rokhinson, Leonid P, Landau, David P, Abate, Yohannes, Freeland, John W, Comin, Riccardo, Ramanathan, Shriram, Rabe, Karin M
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:English
Published: National Academy of Sciences 2020
Online Access:https://hdl.handle.net/1721.1/127812

Internet

https://hdl.handle.net/1721.1/127812

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