Spectromicroscopic measurement of surface and bulk band structure interplay in a disordered topological insulator

Spectromicroscopic measurement of surface and bulk band structure interplay in a disordered topological insulator

Topological insulators are bulk semiconductors that manifest in-gap surface states with massless Dirac-like dispersion due to the topological bulk-boundary correspondence principle1–3. These surface states can be manipulated by the interface environment to display various emergent phenomena4–11. Her...

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Bibliographic Details
Main Authors: Kotta, Erica, Miao, Lin, Xu, Yishuai, Alexander Breitweiser, S, Jozwiak, Chris, Bostwick, Aaron, Rotenberg, Eli, Zhang, Wenhan, Wu, Weida, Suzuki, Takehito, Checkelsky, Joseph, Andrew Wray, L
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:English
Published: Springer Science and Business Media LLC 2020
Online Access:https://hdl.handle.net/1721.1/127816

Internet

https://hdl.handle.net/1721.1/127816

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