Broadband Electro-Optical Crossbar Switches Using Low-Loss Ge2Sb2Se4Te1 Phase Change Material

Broadband Electro-Optical Crossbar Switches Using Low-Loss Ge2Sb2Se4Te1 Phase Change Material

This theoretical modeling and simulation paper presents designs and projected performance of non-volatile broadband on-chip 1 × 2 and 2 × 2 electro-optical switches operating in the telecommunication C-band and based on the silicon-on-insulator technological platform. These optical switches consist...

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Bibliographic Details
Main Authors: De Leonardis, Francesco, Soref, Richard, Passaro, Vittorio M. N., Zhang, Yifei, Hu, Juejun
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
Online Access:https://hdl.handle.net/1721.1/128031

Internet

https://hdl.handle.net/1721.1/128031

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