Unveiling oxidation mechanism of bulk ZrS2

Transition metal dichalcogenides have shown great potential for next-generation electronic and optoelectronic devices. However, native oxidation remains a major issue in achieving their long-term stability, especially for Zr-containing materials such as ZrS₂. Here, we develop a first principles-info...

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Bibliographic Details
Main Authors: Jo, Seong Soon, Jaramillo, Rafael
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Springer International Publishing 2021
Online Access:https://hdl.handle.net/1721.1/129771