Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.

Bibliographic Details
Main Author:	Tewksbury, Theodore L. (Theodore Locke)
Other Authors:	Hae-Seung Lee.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2008
Subjects:	Electrical Engineering and Computer Science
Online Access:	http://dspace.mit.edu/handle/1721.1/13238 http://hdl.handle.net/1721.1/13238

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