Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps

Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.

Detaylı Bibliyografya
Yazar: Tewksbury, Theodore L. (Theodore Locke)
Diğer Yazarlar: Hae-Seung Lee.
Materyal Türü: Tez
Dil:eng
Baskı/Yayın Bilgisi: Massachusetts Institute of Technology 2008
Konular:
Electrical Engineering and Computer Science
Online Erişim:http://dspace.mit.edu/handle/1721.1/13238
http://hdl.handle.net/1721.1/13238
Diğer Bilgiler
Özet:Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.

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