Potential for neutron and proton transmutation doping of GaN and Ga 2 O 3

Potential for neutron and proton transmutation doping of GaN and Ga 2 O 3

<p>High energy proton irradiation produces long-lived p-type doping in GaN and Ga<sub>2</sub>O<sub>3</sub>.</p>

Bibliographic Details
Main Authors: Logan, Julie V, Frantz, Elias B, Casias, Lilian K, Short, Michael P, Morath, Christian P, Webster, Preston T
Other Authors: Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Format: Article
Language:English
Published: Royal Society of Chemistry (RSC) 2021
Online Access:https://hdl.handle.net/1721.1/133217

Internet

https://hdl.handle.net/1721.1/133217

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