High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer

High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer

© 2018 Author(s). We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits. The Al0.95Ga0.05Sb buffer layer is important to achieve low sub...

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Bibliographic Details
Main Authors: Roh, IlPyo, Kim, SangHyeon, Geum, Dae-Myeong, Lu, Wenjie, Song, YunHeub, del Alamo, Jesús A, Song, JinDong
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Language:English
Published: AIP Publishing 2021
Online Access:https://hdl.handle.net/1721.1/134741

Internet

https://hdl.handle.net/1721.1/134741

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