High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer
© 2018 Author(s). We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits. The Al0.95Ga0.05Sb buffer layer is important to achieve low sub...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing
2021
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| Online Access: | https://hdl.handle.net/1721.1/134741 |
| _version_ | 1826212857817071616 |
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| author | Roh, IlPyo Kim, SangHyeon Geum, Dae-Myeong Lu, Wenjie Song, YunHeub del Alamo, Jesús A Song, JinDong |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Roh, IlPyo Kim, SangHyeon Geum, Dae-Myeong Lu, Wenjie Song, YunHeub del Alamo, Jesús A Song, JinDong |
| author_sort | Roh, IlPyo |
| collection | MIT |
| description | © 2018 Author(s). We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits. The Al0.95Ga0.05Sb buffer layer is important to achieve low substrate leakage and guarantee good channel material quality and high hole mobility. We grew buffer layers with various Sb effective flux conditions using molecular beam epitaxy to obtain high crystal quality and proper electrical properties. We systematically evaluated the relationship between the crystal quality and electrical properties using X-ray diffraction, atomic force microscope, Raman, and the Hall effect measurement system. Then, on this optimized buffer layer, we grew the In0.2Al0.8Sb/In0.25Ga0.75Sb/linear-graded Al0.8Ga0.2Sb QW structure to obtain high hole mobility with compressive strain. Moreover, the compressive strain and hole mobility were measured by Raman and Hall effect measurement system. The results show a compressive strain value of 1.1% in In0.25Ga0.75Sb QW channel, which is very close to the theoretical value of 1.1% from lattice mismatch, exhibiting the highest hole mobility of 1170 cm2/V s among reported mobility in In0.25Ga0.75Sb QW. Furthermore, it was able to be fabricated as p-type Fin-FET and shown the excellent electrical characteristics with low Smin and high gm. |
| first_indexed | 2024-09-23T15:38:56Z |
| format | Article |
| id | mit-1721.1/134741 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:38:56Z |
| publishDate | 2021 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1347412023-03-15T17:29:13Z High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer Roh, IlPyo Kim, SangHyeon Geum, Dae-Myeong Lu, Wenjie Song, YunHeub del Alamo, Jesús A Song, JinDong Massachusetts Institute of Technology. Microsystems Technology Laboratories © 2018 Author(s). We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits. The Al0.95Ga0.05Sb buffer layer is important to achieve low substrate leakage and guarantee good channel material quality and high hole mobility. We grew buffer layers with various Sb effective flux conditions using molecular beam epitaxy to obtain high crystal quality and proper electrical properties. We systematically evaluated the relationship between the crystal quality and electrical properties using X-ray diffraction, atomic force microscope, Raman, and the Hall effect measurement system. Then, on this optimized buffer layer, we grew the In0.2Al0.8Sb/In0.25Ga0.75Sb/linear-graded Al0.8Ga0.2Sb QW structure to obtain high hole mobility with compressive strain. Moreover, the compressive strain and hole mobility were measured by Raman and Hall effect measurement system. The results show a compressive strain value of 1.1% in In0.25Ga0.75Sb QW channel, which is very close to the theoretical value of 1.1% from lattice mismatch, exhibiting the highest hole mobility of 1170 cm2/V s among reported mobility in In0.25Ga0.75Sb QW. Furthermore, it was able to be fabricated as p-type Fin-FET and shown the excellent electrical characteristics with low Smin and high gm. 2021-10-27T20:08:55Z 2021-10-27T20:08:55Z 2018 2019-05-17T15:42:35Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/134741 en 10.1063/1.5043509 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf AIP Publishing MIT web domain |
| spellingShingle | Roh, IlPyo Kim, SangHyeon Geum, Dae-Myeong Lu, Wenjie Song, YunHeub del Alamo, Jesús A Song, JinDong High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer |
| title | High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer |
| title_full | High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer |
| title_fullStr | High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer |
| title_full_unstemmed | High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer |
| title_short | High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer |
| title_sort | high hole mobility in strained in 0 25 ga 0 75 sb quantum well with high quality al 0 95 ga 0 05 sb buffer layer |
| url | https://hdl.handle.net/1721.1/134741 |
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