High hole mobility in strained In 0.25 Ga 0.75 Sb quantum well with high quality Al 0.95 Ga 0.05 Sb buffer layer
© 2018 Author(s). We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits. The Al0.95Ga0.05Sb buffer layer is important to achieve low sub...
| Main Authors: | , , , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 语言: | English |
| 出版: |
AIP Publishing
2021
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| 在线阅读: | https://hdl.handle.net/1721.1/134741 |