High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting

High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting

© 2018 Author(s). Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM),...

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Bibliographic Details
Main Authors: Pastor, David, Gandhi, Hemi H, Monmeyran, Corentin P, Akey, Austin J, Milazzo, Ruggero, Cai, Yan, Napolitani, Enrico, Gwilliam, Russell M, Crowe, Iain F, Michel, Jurgen, Kimerling, LC, Agarwal, Anuradha, Mazur, Eric, Aziz, Michael J
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: AIP Publishing 2021
Online Access:https://hdl.handle.net/1721.1/135024

Internet

https://hdl.handle.net/1721.1/135024

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