High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting
© 2018 Author(s). Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM),...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing
2021
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| Online Access: | https://hdl.handle.net/1721.1/135024 |
| _version_ | 1811077901750108160 |
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| author | Pastor, David Gandhi, Hemi H Monmeyran, Corentin P Akey, Austin J Milazzo, Ruggero Cai, Yan Napolitani, Enrico Gwilliam, Russell M Crowe, Iain F Michel, Jurgen Kimerling, LC Agarwal, Anuradha Mazur, Eric Aziz, Michael J |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Pastor, David Gandhi, Hemi H Monmeyran, Corentin P Akey, Austin J Milazzo, Ruggero Cai, Yan Napolitani, Enrico Gwilliam, Russell M Crowe, Iain F Michel, Jurgen Kimerling, LC Agarwal, Anuradha Mazur, Eric Aziz, Michael J |
| author_sort | Pastor, David |
| collection | MIT |
| description | © 2018 Author(s). Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices. |
| first_indexed | 2024-09-23T10:50:05Z |
| format | Article |
| id | mit-1721.1/135024 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T10:50:05Z |
| publishDate | 2021 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1350242023-02-24T15:54:54Z High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting Pastor, David Gandhi, Hemi H Monmeyran, Corentin P Akey, Austin J Milazzo, Ruggero Cai, Yan Napolitani, Enrico Gwilliam, Russell M Crowe, Iain F Michel, Jurgen Kimerling, LC Agarwal, Anuradha Mazur, Eric Aziz, Michael J Massachusetts Institute of Technology. Department of Materials Science and Engineering MIT Materials Research Laboratory © 2018 Author(s). Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices. 2021-10-27T20:10:22Z 2021-10-27T20:10:22Z 2018 2019-09-20T18:17:29Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/135024 en 10.1063/1.5012512 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf AIP Publishing other univ website |
| spellingShingle | Pastor, David Gandhi, Hemi H Monmeyran, Corentin P Akey, Austin J Milazzo, Ruggero Cai, Yan Napolitani, Enrico Gwilliam, Russell M Crowe, Iain F Michel, Jurgen Kimerling, LC Agarwal, Anuradha Mazur, Eric Aziz, Michael J High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting |
| title | High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting |
| title_full | High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting |
| title_fullStr | High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting |
| title_full_unstemmed | High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting |
| title_short | High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting |
| title_sort | high level active n doping of strained germanium through co implantation and nanosecond pulsed laser melting |
| url | https://hdl.handle.net/1721.1/135024 |
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