Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

© 2019, The Author(s). III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we prop...

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Bibliographic Details
Main Authors: Vukajlovic-Plestina, J, Kim, W, Ghisalberti, L, Varnavides, G, Tütüncuoglu, G, Potts, H, Friedl, M, Güniat, L, Carter, WC, Dubrovskii, VG, Fontcuberta i Morral, A
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Springer Science and Business Media LLC 2021
Online Access:https://hdl.handle.net/1721.1/135132

Internet

https://hdl.handle.net/1721.1/135132

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