Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures

Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures

© 2019 The Japan Society of Applied Physics. Commercial InGaN/GaN light emitting diodes continue to suffer from efficiency droop at high current densities, and urgently require enhanced structural-optical toolsets for active region characterization. In our work, we measure delayed (tens of seconds)...

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Bibliographic Details
Main Authors: Zhao, Zhibo, Singh, Akshay, Chesin, Jordan, Armitage, Rob, Wildeson, Isaac, Deb, Parijat, Armstrong, Andrew, Kisslinger, Kim, Stach, Eric A, Gradečak, Silvija
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Japan Society of Applied Physics 2021
Online Access:https://hdl.handle.net/1721.1/135138

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https://hdl.handle.net/1721.1/135138

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