Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures
© 2019 The Japan Society of Applied Physics. Commercial InGaN/GaN light emitting diodes continue to suffer from efficiency droop at high current densities, and urgently require enhanced structural-optical toolsets for active region characterization. In our work, we measure delayed (tens of seconds)...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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Japan Society of Applied Physics
2021
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| Online Access: | https://hdl.handle.net/1721.1/135138 |
| _version_ | 1826209714204049408 |
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| author | Zhao, Zhibo Singh, Akshay Chesin, Jordan Armitage, Rob Wildeson, Isaac Deb, Parijat Armstrong, Andrew Kisslinger, Kim Stach, Eric A Gradečak, Silvija |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Zhao, Zhibo Singh, Akshay Chesin, Jordan Armitage, Rob Wildeson, Isaac Deb, Parijat Armstrong, Andrew Kisslinger, Kim Stach, Eric A Gradečak, Silvija |
| author_sort | Zhao, Zhibo |
| collection | MIT |
| description | © 2019 The Japan Society of Applied Physics. Commercial InGaN/GaN light emitting diodes continue to suffer from efficiency droop at high current densities, and urgently require enhanced structural-optical toolsets for active region characterization. In our work, we measure delayed (tens of seconds) cathodoluminescence which is influenced by carrier transport and deep level defects. Further, we observe that drops in efficiency are not correlated with quantum well (QW) width fluctuations. To explain the rise dynamics, we propose a model involving filling of deep level defects and simultaneous reduction of built-in field within the multi-QW active region. These measurements yield insights into carrier transport, efficiency-reducing defects, and QW band structure. |
| first_indexed | 2024-09-23T14:27:43Z |
| format | Article |
| id | mit-1721.1/135138 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:27:43Z |
| publishDate | 2021 |
| publisher | Japan Society of Applied Physics |
| record_format | dspace |
| spelling | mit-1721.1/1351382023-02-24T19:10:35Z Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures Zhao, Zhibo Singh, Akshay Chesin, Jordan Armitage, Rob Wildeson, Isaac Deb, Parijat Armstrong, Andrew Kisslinger, Kim Stach, Eric A Gradečak, Silvija Massachusetts Institute of Technology. Department of Materials Science and Engineering © 2019 The Japan Society of Applied Physics. Commercial InGaN/GaN light emitting diodes continue to suffer from efficiency droop at high current densities, and urgently require enhanced structural-optical toolsets for active region characterization. In our work, we measure delayed (tens of seconds) cathodoluminescence which is influenced by carrier transport and deep level defects. Further, we observe that drops in efficiency are not correlated with quantum well (QW) width fluctuations. To explain the rise dynamics, we propose a model involving filling of deep level defects and simultaneous reduction of built-in field within the multi-QW active region. These measurements yield insights into carrier transport, efficiency-reducing defects, and QW band structure. 2021-10-27T20:10:54Z 2021-10-27T20:10:54Z 2019 2019-09-18T18:21:16Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/135138 en 10.7567/1882-0786/AB0341 Applied Physics Express Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Japan Society of Applied Physics arXiv |
| spellingShingle | Zhao, Zhibo Singh, Akshay Chesin, Jordan Armitage, Rob Wildeson, Isaac Deb, Parijat Armstrong, Andrew Kisslinger, Kim Stach, Eric A Gradečak, Silvija Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures |
| title | Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures |
| title_full | Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures |
| title_fullStr | Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures |
| title_full_unstemmed | Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures |
| title_short | Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures |
| title_sort | cathodoluminescence as an effective probe of carrier transport and deep level defects in droop mitigating ingan gan quantum well heterostructures |
| url | https://hdl.handle.net/1721.1/135138 |
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