An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

<jats:title>Abstract</jats:title><jats:p>Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic ox...

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Bibliographic Details
Main Authors: Ning, Shuai, Kumar, Abinash, Klyukin, Konstantin, Cho, Eunsoo, Kim, Jong Heon, Su, Tingyu, Kim, Hyun-Suk, LeBeau, James M, Yildiz, Bilge, Ross, Caroline A
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Springer Science and Business Media LLC 2021
Online Access:https://hdl.handle.net/1721.1/136129

Internet

https://hdl.handle.net/1721.1/136129

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