Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates
© 2019 Author(s). Wet-etch techniques to realize suspended microscale structures of single-crystalline SrTiO3 and BaTiO3 grown on Si are explored. The authors examine the effects of oxygen vacancies and dislocations on etch rates. Both oxygen vacancies and dislocations enhance etching, yielding rate...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Vacuum Society
2021
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| Online Access: | https://hdl.handle.net/1721.1/136254 |
| _version_ | 1811094541072072704 |
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| author | Lim, Zheng Hui Chrysler, Matthew Kumar, Abinash Mauthe, Jacob P Kumah, Divine P Richardson, Chris LeBeau, James M Ngai, Joseph H |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Lim, Zheng Hui Chrysler, Matthew Kumar, Abinash Mauthe, Jacob P Kumah, Divine P Richardson, Chris LeBeau, James M Ngai, Joseph H |
| author_sort | Lim, Zheng Hui |
| collection | MIT |
| description | © 2019 Author(s). Wet-etch techniques to realize suspended microscale structures of single-crystalline SrTiO3 and BaTiO3 grown on Si are explored. The authors examine the effects of oxygen vacancies and dislocations on etch rates. Both oxygen vacancies and dislocations enhance etching, yielding rates that are sufficiently high to enable conventional photoresist to serve as a mask layer. Suspended bridge structures are realized by etching the underlying Si substrate using a potassium hydroxide solution. The ability to realize suspended microscale structures using wet-etch techniques that are compatible with standard semiconductor device processing opens a pathway to integrate multifunctional oxides in microelectromechanical systems. |
| first_indexed | 2024-09-23T16:01:48Z |
| format | Article |
| id | mit-1721.1/136254 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T16:01:48Z |
| publishDate | 2021 |
| publisher | American Vacuum Society |
| record_format | dspace |
| spelling | mit-1721.1/1362542023-02-22T17:31:14Z Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates Lim, Zheng Hui Chrysler, Matthew Kumar, Abinash Mauthe, Jacob P Kumah, Divine P Richardson, Chris LeBeau, James M Ngai, Joseph H Massachusetts Institute of Technology. Department of Materials Science and Engineering © 2019 Author(s). Wet-etch techniques to realize suspended microscale structures of single-crystalline SrTiO3 and BaTiO3 grown on Si are explored. The authors examine the effects of oxygen vacancies and dislocations on etch rates. Both oxygen vacancies and dislocations enhance etching, yielding rates that are sufficiently high to enable conventional photoresist to serve as a mask layer. Suspended bridge structures are realized by etching the underlying Si substrate using a potassium hydroxide solution. The ability to realize suspended microscale structures using wet-etch techniques that are compatible with standard semiconductor device processing opens a pathway to integrate multifunctional oxides in microelectromechanical systems. 2021-10-27T20:34:31Z 2021-10-27T20:34:31Z 2020 2020-09-10T15:31:20Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/136254 en 10.1116/1.5135035 Journal of Vacuum Science and Technology A Vacuum Surfaces and Films Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Vacuum Society Other repository |
| spellingShingle | Lim, Zheng Hui Chrysler, Matthew Kumar, Abinash Mauthe, Jacob P Kumah, Divine P Richardson, Chris LeBeau, James M Ngai, Joseph H Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates |
| title | Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates |
| title_full | Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates |
| title_fullStr | Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates |
| title_full_unstemmed | Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates |
| title_short | Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates |
| title_sort | suspended single crystalline oxide structures on silicon through wet etch techniques effects of oxygen vacancies and dislocations on etch rates |
| url | https://hdl.handle.net/1721.1/136254 |
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