Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates

Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates

© 2019 Author(s). Wet-etch techniques to realize suspended microscale structures of single-crystalline SrTiO3 and BaTiO3 grown on Si are explored. The authors examine the effects of oxygen vacancies and dislocations on etch rates. Both oxygen vacancies and dislocations enhance etching, yielding rate...

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Bibliographic Details
Main Authors: Lim, Zheng Hui, Chrysler, Matthew, Kumar, Abinash, Mauthe, Jacob P, Kumah, Divine P, Richardson, Chris, LeBeau, James M, Ngai, Joseph H
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: American Vacuum Society 2021
Online Access:https://hdl.handle.net/1721.1/136254

Internet

https://hdl.handle.net/1721.1/136254

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