More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques
Techniques that employ positron annihilation spectroscopy are powerful tools to investigate defect structures and concentrations in materials. A hindrance to experimental design and the interpretation of results lies in the lack of agreement in the literature concerning the proper form of the positr...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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AIP Publishing
2021
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| Online Access: | https://hdl.handle.net/1721.1/136975.2 |
| _version_ | 1810991114245636096 |
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| author | Logan, Julie V. Short, Michael Philip Webster, PT Morath, CP |
| author2 | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Logan, Julie V. Short, Michael Philip Webster, PT Morath, CP |
| author_sort | Logan, Julie V. |
| collection | MIT |
| description | Techniques that employ positron annihilation spectroscopy are powerful tools to investigate defect structures and concentrations in materials. A hindrance to experimental design and the interpretation of results lies in the lack of agreement in the literature concerning the proper form of the positron implantation profile, a function that determines the sensitivity range for all non-slow positron annihilation spectroscopy techniques. Employing the dominant 22 Na isotopic source, a positron implantation profile database of 270 common materials is published. The parameters for a novel implantation profile functional form providing superior agreement with simulation are derived. Finally, and most critically, an algorithm is presented and validated, which permits utilization of the published elemental implantation profile parameters to produce the positron implantation profile for any material of interest. This tool provides rapid calculation of the sensitivity range for all positron annihilation techniques, enabling more informed experimental design and more accurate knowledge of the spatial distribution of defects in materials. |
| first_indexed | 2024-09-23T12:48:32Z |
| format | Article |
| id | mit-1721.1/136975.2 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T12:48:32Z |
| publishDate | 2021 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/136975.22021-12-09T21:36:08Z More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques Logan, Julie V. Short, Michael Philip Webster, PT Morath, CP Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Techniques that employ positron annihilation spectroscopy are powerful tools to investigate defect structures and concentrations in materials. A hindrance to experimental design and the interpretation of results lies in the lack of agreement in the literature concerning the proper form of the positron implantation profile, a function that determines the sensitivity range for all non-slow positron annihilation spectroscopy techniques. Employing the dominant 22 Na isotopic source, a positron implantation profile database of 270 common materials is published. The parameters for a novel implantation profile functional form providing superior agreement with simulation are derived. Finally, and most critically, an algorithm is presented and validated, which permits utilization of the published elemental implantation profile parameters to produce the positron implantation profile for any material of interest. This tool provides rapid calculation of the sensitivity range for all positron annihilation techniques, enabling more informed experimental design and more accurate knowledge of the spatial distribution of defects in materials. 2021-12-09T21:36:07Z 2021-11-01T16:41:49Z 2021-12-09T21:36:07Z 2020-07 2020-04 2021-11-01T14:23:41Z Article http://purl.org/eprint/type/JournalArticle 1520-8850 https://hdl.handle.net/1721.1/136975.2 Logan, J. V. et al. "More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques. "Journal of Applied Physics 128, 045105 (July 2020): 045105. © 2020 U.S. Government en http://dx.doi.org/10.1063/5.0011021 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/octet-stream AIP Publishing Julie Logan |
| spellingShingle | Logan, Julie V. Short, Michael Philip Webster, PT Morath, CP More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques |
| title | More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques |
| title_full | More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques |
| title_fullStr | More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques |
| title_full_unstemmed | More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques |
| title_short | More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques |
| title_sort | more accurate parameterization of positron implantation depth profiles for the sensitivity range of positron based characterization techniques |
| url | https://hdl.handle.net/1721.1/136975.2 |
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