First Demonstration of a Self-Aligned GaN p-FET

First Demonstration of a Self-Aligned GaN p-FET

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In this work, we demonstrate a self-aligned p-FET with a GaN/Al0 2Ga0 8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device with recess depth of 70 nm exhibits a record ON-resistance of 400 Ωmm and ON-current over 5...

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Bibliographic Details
Main Authors: Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Then, Han Wui, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2021
Online Access:https://hdl.handle.net/1721.1/137036.2

Internet

https://hdl.handle.net/1721.1/137036.2

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