First Demonstration of a Self-Aligned GaN p-FET
In this work, we demonstrate a self-aligned p-FET with a GaN/Al0 2Ga0 8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device with recess depth of 70 nm exhibits a record ON-resistance of 400 Ωmm and ON-current over 5...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers (IEEE)
2021
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| Online Access: | https://hdl.handle.net/1721.1/137036.2 |
| _version_ | 1811098236190982144 |
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| author | Chowdhury, Nadim Xie, Qingyun Yuan, Mengyang Rajput, Nitul S. Xiang, Peng Cheng, Kai Then, Han Wui Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Chowdhury, Nadim Xie, Qingyun Yuan, Mengyang Rajput, Nitul S. Xiang, Peng Cheng, Kai Then, Han Wui Palacios, Tomas |
| author_sort | Chowdhury, Nadim |
| collection | MIT |
| description | In this work, we demonstrate a self-aligned p-FET with a GaN/Al0 2Ga0 8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device with recess depth of 70 nm exhibits a record ON-resistance of 400 Ωmm and ON-current over 5 mA/mm with ON-OFF ratio of 6×105 when compared with other p-FET demonstrations based on GaN/AlGaN heterostructure. The device shows E-mode operation with a threshold voltage of -1 V, making it a promising candidate for GaN-based complementary circuit that can be integrated on a Silicon platform. A monolithically integrated n-channel transistor with p-GaN gate is also demonstrated. The potential of the reported p-FET for complementary logic application is evaluated through industry-standard compact modeling and inverter circuit simulation. |
| first_indexed | 2024-09-23T17:12:11Z |
| format | Article |
| id | mit-1721.1/137036.2 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T17:12:11Z |
| publishDate | 2021 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/137036.22021-12-10T21:52:11Z First Demonstration of a Self-Aligned GaN p-FET Chowdhury, Nadim Xie, Qingyun Yuan, Mengyang Rajput, Nitul S. Xiang, Peng Cheng, Kai Then, Han Wui Palacios, Tomas Massachusetts Institute of Technology. Microsystems Technology Laboratories In this work, we demonstrate a self-aligned p-FET with a GaN/Al0 2Ga0 8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device with recess depth of 70 nm exhibits a record ON-resistance of 400 Ωmm and ON-current over 5 mA/mm with ON-OFF ratio of 6×105 when compared with other p-FET demonstrations based on GaN/AlGaN heterostructure. The device shows E-mode operation with a threshold voltage of -1 V, making it a promising candidate for GaN-based complementary circuit that can be integrated on a Silicon platform. A monolithically integrated n-channel transistor with p-GaN gate is also demonstrated. The potential of the reported p-FET for complementary logic application is evaluated through industry-standard compact modeling and inverter circuit simulation. 2021-12-10T21:52:10Z 2021-11-01T18:35:34Z 2021-12-10T21:52:10Z 2019 2021-02-05T19:11:46Z Article http://purl.org/eprint/type/ConferencePaper https://hdl.handle.net/1721.1/137036.2 Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S, Xiang, Peng et al. 2019. "First Demonstration of a Self-Aligned GaN p-FET." Technical Digest - International Electron Devices Meeting, IEDM, 2019-December. en 10.1109/IEDM19573.2019.8993569 Technical Digest - International Electron Devices Meeting, IEDM Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/octet-stream Institute of Electrical and Electronics Engineers (IEEE) Other repository |
| spellingShingle | Chowdhury, Nadim Xie, Qingyun Yuan, Mengyang Rajput, Nitul S. Xiang, Peng Cheng, Kai Then, Han Wui Palacios, Tomas First Demonstration of a Self-Aligned GaN p-FET |
| title | First Demonstration of a Self-Aligned GaN p-FET |
| title_full | First Demonstration of a Self-Aligned GaN p-FET |
| title_fullStr | First Demonstration of a Self-Aligned GaN p-FET |
| title_full_unstemmed | First Demonstration of a Self-Aligned GaN p-FET |
| title_short | First Demonstration of a Self-Aligned GaN p-FET |
| title_sort | first demonstration of a self aligned gan p fet |
| url | https://hdl.handle.net/1721.1/137036.2 |
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