Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and a...

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Bibliographic Details
Main Authors: Sadeghi, Ida, Ye, Kevin, Xu, Michael, Li, Yifei, LeBeau, James M., Jaramillo, Rafael
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Published: Wiley 2022
Subjects:
Electrochemistry
Condensed Matter Physics
Biomaterials
Electronic, Optical and Magnetic Materials
Online Access:https://hdl.handle.net/1721.1/139810

Internet

https://hdl.handle.net/1721.1/139810

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