Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy
We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and a...
| Main Authors: | , , , , , |
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| Format: | Article |
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Wiley
2022
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| Online Access: | https://hdl.handle.net/1721.1/139810 |
| _version_ | 1826217485126336512 |
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| author | Sadeghi, Ida Ye, Kevin Xu, Michael Li, Yifei LeBeau, James M. Jaramillo, Rafael |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Sadeghi, Ida Ye, Kevin Xu, Michael Li, Yifei LeBeau, James M. Jaramillo, Rafael |
| author_sort | Sadeghi, Ida |
| collection | MIT |
| description | We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3
forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The
single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3
stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow
epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface
layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that
accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites.
This work sets the stage for developing chalcogenide perovskites as a family of semiconductor
alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin
films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The
methods demonstrated here also represent a revival of gas-source chalcogenide MBE. |
| first_indexed | 2024-09-23T17:04:24Z |
| format | Article |
| id | mit-1721.1/139810 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T17:04:24Z |
| publishDate | 2022 |
| publisher | Wiley |
| record_format | dspace |
| spelling | mit-1721.1/1398102023-02-13T20:57:08Z Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy Sadeghi, Ida Ye, Kevin Xu, Michael Li, Yifei LeBeau, James M. Jaramillo, Rafael Massachusetts Institute of Technology. Department of Materials Science and Engineering Electrochemistry Condensed Matter Physics Biomaterials Electronic, Optical and Magnetic Materials We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE. National Science Foundation (NSF) 2022-01-31T18:41:57Z 2022-01-31T18:41:57Z 2021-08-16 Article http://purl.org/eprint/type/JournalArticle 1616-301X 1616-3028 https://hdl.handle.net/1721.1/139810 Sadeghi, Ida, Ye, Kevin, Xu, Michael, Li, Yifei, LeBeau, James M. et al. 2021. "Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy." Advanced Functional Materials, 31 (45). 10.1002/adfm.202105563 10.1002/adfm.202105563 Advanced Functional Materials Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Wiley Prof. Jaramillo |
| spellingShingle | Electrochemistry Condensed Matter Physics Biomaterials Electronic, Optical and Magnetic Materials Sadeghi, Ida Ye, Kevin Xu, Michael Li, Yifei LeBeau, James M. Jaramillo, Rafael Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy |
| title | Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy |
| title_full | Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy |
| title_fullStr | Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy |
| title_full_unstemmed | Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy |
| title_short | Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy |
| title_sort | making bazrs 3 chalcogenide perovskite thin films by molecular beam epitaxy |
| topic | Electrochemistry Condensed Matter Physics Biomaterials Electronic, Optical and Magnetic Materials |
| url | https://hdl.handle.net/1721.1/139810 |
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